IRGSL30B60KPBF
Infineon Technologies
Infineon Technologies
IGBT 600V 78A 370W TO262
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Optimize your power systems with the IRGSL30B60KPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IRGSL30B60KPBF delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 78 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
- Power - Max: 370 W
- Switching Energy: 350µJ (on), 825µJ (off)
- Input Type: Standard
- Gate Charge: 102 nC
- Td (on/off) @ 25°C: 46ns/185ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
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