STGWA30H65FB
STMicroelectronics
STMicroelectronics
IGBT
$0.00
Available to order
Reference Price (USD)
600+
$1.91730
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the STGWA30H65FB Single IGBT transistor by STMicroelectronics, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the STGWA30H65FB ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the STGWA30H65FB for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 151mJ (on), 293mJ (off)
- Input Type: Standard
- Gate Charge: 149 nC
- Td (on/off) @ 25°C: 37ns/146ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
Related Products
Infineon Technologies
IRGB30B60KPBF
Infineon Technologies
IGP20N60H3
Renesas Electronics America Inc
RJH60F7ADPK-00#T0
IXYS
IXGP90N33TCM-A
Infineon Technologies
IRG4PH50SPBF
Infineon Technologies
SGD06N60BUMA1
STMicroelectronics
STGB20NB37LZT4
Infineon Technologies
IRGP6690DPBF
IXYS
IXGH25N100AU1
Infineon Technologies