IST026N10NM5AUMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOF-5
$5.57
Available to order
Reference Price (USD)
1+
$5.57000
500+
$5.5143
1000+
$5.4586
1500+
$5.4029
2000+
$5.3472
2500+
$5.2915
Exquisite packaging
Discount
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The IST026N10NM5AUMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IST026N10NM5AUMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 148µA
- Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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Infineon Technologies