IXA40RG1200DHG-TUB
IXYS
IXYS
IGBT H BRIDGE 1200V 63A SMPD
$13.80
Available to order
Reference Price (USD)
1+
$13.80200
500+
$13.66398
1000+
$13.52596
1500+
$13.38794
2000+
$13.24992
2500+
$13.1119
Exquisite packaging
Discount
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As a leader in Transistors - IGBTs - Arrays, IXYS presents the IXA40RG1200DHG-TUB, a Discrete Semiconductor Product engineered for next-gen demands. Its NPT trench technology ensures superior thermal cycling capability. From elevator drives to HVDC transmission, this component powers critical infrastructure in smart cities and utility-scale energy projects.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 63 A
- Power - Max: 230 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
- Current - Collector Cutoff (Max): 150 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
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