IXDR30N120D1
IXYS
IXYS
IGBT 1200V 50A 200W ISOPLUS247
$11.76
Available to order
Reference Price (USD)
30+
$10.00400
Exquisite packaging
Discount
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Discover the IXDR30N120D1 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXDR30N120D1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXDR30N120D1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
- Power - Max: 200 W
- Switching Energy: 4.6mJ (on), 3.4mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 30A, 47Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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