IXBH42N170
IXYS
IXYS
IGBT 1700V 80A 360W TO247
$27.91
Available to order
Reference Price (USD)
1+
$21.53000
10+
$19.91100
25+
$18.29640
100+
$17.00480
250+
$15.60564
500+
$14.85226
Exquisite packaging
Discount
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Upgrade your power management systems with the IXBH42N170 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXBH42N170 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXBH42N170 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
- Power - Max: 360 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 188 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.32 µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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