HGTG2ON60C3DR
Harris Corporation
Harris Corporation
40A, 600V, RUGGED UFS SERIES N C
$2.96
Available to order
Reference Price (USD)
1+
$2.96000
500+
$2.9304
1000+
$2.9008
1500+
$2.8712
2000+
$2.8416
2500+
$2.812
Exquisite packaging
Discount
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Discover the HGTG2ON60C3DR Single IGBT transistor by Harris Corporation, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the HGTG2ON60C3DR ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the HGTG2ON60C3DR for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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