IXFA7N100P-TRL
IXYS
IXYS
MOSFET N-CH 1000V 7A TO263
$4.40
Available to order
Reference Price (USD)
1+
$4.39591
500+
$4.3519509
1000+
$4.3079918
1500+
$4.2640327
2000+
$4.2200736
2500+
$4.1761145
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFA7N100P-TRL by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFA7N100P-TRL is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
IRFPC60LCPBF
Vishay Siliconix
SIHD14N60E-BE3
onsemi
RFD3055LE
onsemi
NVMFS020N06CT1G
Diodes Incorporated
DMN4030LK3-13
Infineon Technologies
BSS126IXTSA1
Diodes Incorporated
DMP1009UFDFQ-13
Wolfspeed, Inc.
C2M0025120D
IXYS
IXTQ60N20L2
STMicroelectronics