Shopping cart

Subtotal: $0.00

IXFH120N25X3

IXYS
IXFH120N25X3 Preview
IXYS
MOSFET N-CH 250V 120A TO247
$13.44
Available to order
Reference Price (USD)
1+
$10.45000
30+
$8.56900
120+
$7.73300
510+
$6.47900
1,020+
$5.85200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3

Related Products

Vishay Siliconix

SQ2337ES-T1_BE3

Renesas Electronics America Inc

2SK1401A-E

Renesas Electronics America Inc

NP15P06SLG-E1-AY

Vishay Siliconix

SI8812DB-T2-E1

Toshiba Semiconductor and Storage

TK90S06N1L,LXHQ

Panjit International Inc.

PJQ5442_R2_00001

Toshiba Semiconductor and Storage

TK2Q60D(Q)

IXYS Integrated Circuits Division

CPC3708CTR

STMicroelectronics

STD12N50DM2

Renesas Electronics America Inc

NP16N06YLL-E1-AY

Top