IXFQ80N25X3
IXYS
IXYS
MOSFET N-CH 250V 80A TO3P
$11.14
Available to order
Reference Price (USD)
1+
$11.13800
500+
$11.02662
1000+
$10.91524
1500+
$10.80386
2000+
$10.69248
2500+
$10.5811
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFQ80N25X3 by IXYS is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose IXYS for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Diodes Incorporated
DMN3027LFG-7
onsemi
FDD4243-G
Taiwan Semiconductor Corporation
TSM16ND50CI C0G
onsemi
ECH8607-TL-E
STMicroelectronics
STHU32N65DM6AG
Harris Corporation
RFM10N50
Vishay Siliconix
SIRA52DP-T1-RE3
Goford Semiconductor
G1003A
Infineon Technologies
IMBG65R022M1HXTMA1
onsemi