IXFY4N85X
IXYS
IXYS
MOSFET N-CH 850V 3.5A TO252
$3.98
Available to order
Reference Price (USD)
1+
$3.04000
70+
$2.45000
140+
$2.20500
560+
$1.71500
1,050+
$1.42100
2,520+
$1.37200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFY4N85X by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXFY4N85X is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
3LP01SS-TL-E
NTE Electronics, Inc
NTE2398
Vishay Siliconix
SISH112DN-T1-GE3
Goford Semiconductor
G65P06K
Sanken
2SK3800
Fairchild Semiconductor
NDC631N
Microchip Technology
APT20M38BVRG
Infineon Technologies
SPS04N60C3AKMA1
Rectron USA
RM3N700S4
Vishay Siliconix