RJH1CV7DPK-00#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 1200V 70A 320W TO-3P
$0.00
Available to order
Reference Price (USD)
1+
$7.22000
10+
$6.44700
25+
$5.80240
Exquisite packaging
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Upgrade your power management systems with the RJH1CV7DPK-00#T0 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RJH1CV7DPK-00#T0 provides reliable and efficient operation. Renesas Electronics America Inc's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RJH1CV7DPK-00#T0 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A
- Power - Max: 320 W
- Switching Energy: 3.2mJ (on), 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 166 nC
- Td (on/off) @ 25°C: 53ns/185ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3P
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