IXGN72N60C3H1
IXYS
IXYS
IGBT MOD 600V 78A 360W SOT227B
$33.90
Available to order
Reference Price (USD)
10+
$23.03300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS's IXGN72N60C3H1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the IXGN72N60C3H1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust IXYS to deliver cutting-edge IGBT solutions with the IXGN72N60C3H1 power module.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 78 A
- Power - Max: 360 W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 4.78 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
Related Products
Infineon Technologies
FS100R12PT4BOSA1
Infineon Technologies
IFF300B17N2E4PB11BPSA1
Infineon Technologies
FP50R06W2E3BOMA1
Infineon Technologies
FS450R17KE3BOSA1
Infineon Technologies
FF450R12KT4PHOSA1
Microchip Technology
APT80GP60J
Infineon Technologies
FP50R06W2E3B11BOMA1
Infineon Technologies
FP10R12W1T7B11BOMA1
Infineon Technologies
IFF600B12ME4PB11BPSA1
Infineon Technologies