RJP60F0DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 50A 122W LDPAK
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Upgrade your power management systems with the RJP60F0DPE-00#J3 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RJP60F0DPE-00#J3 provides reliable and efficient operation. Renesas Electronics America Inc's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RJP60F0DPE-00#J3 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
- Power - Max: 122 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 46ns/70ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-83
- Supplier Device Package: LDPAK
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