IXGQ170N30PB
IXYS
IXYS
IGBT 300V 170A 330W TO3P
$0.00
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Reference Price (USD)
30+
$2.71700
Exquisite packaging
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Discover the IXGQ170N30PB Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXGQ170N30PB ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXGQ170N30PB for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Current - Collector (Ic) (Max): 170 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 85A
- Power - Max: 330 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 143 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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