IXGQ20N120B
IXYS
IXYS
IGBT 1200V 40A 190W TO3P
$0.00
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Reference Price (USD)
30+
$4.72500
Exquisite packaging
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The IXGQ20N120B Single IGBT transistor by IXYS is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the IXGQ20N120B provides consistent performance in varied conditions. Rely on IXYS's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 190 W
- Switching Energy: 2.1mJ (off)
- Input Type: Standard
- Gate Charge: 62 nC
- Td (on/off) @ 25°C: 20ns/270ns
- Test Condition: 960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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