FGB5N60UNDF
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$0.00
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Reference Price (USD)
800+
$1.11904
Exquisite packaging
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The FGB5N60UNDF Single IGBT transistor by Fairchild Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGB5N60UNDF ensures precise power control and long-term stability. With Fairchild Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGB5N60UNDF into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 15 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
- Power - Max: 73.5 W
- Switching Energy: 80µJ (on), 70µJ (off)
- Input Type: Standard
- Gate Charge: 12.1 nC
- Td (on/off) @ 25°C: 5.4ns/25.4ns
- Test Condition: 400V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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