IXGT20N120BD1
IXYS
IXYS
IGBT 1200V 40A 190W TO268
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$7.48000
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The IXGT20N120BD1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXGT20N120BD1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXGT20N120BD1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 190 W
- Switching Energy: 2.1mJ (off)
- Input Type: Standard
- Gate Charge: 72 nC
- Td (on/off) @ 25°C: 25ns/150ns
- Test Condition: 960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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