IXGT40N120B2D1
IXYS
IXYS
IGBT 1200V 75A 380W TO268
$0.00
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Reference Price (USD)
30+
$14.66600
Exquisite packaging
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Upgrade your power management systems with the IXGT40N120B2D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGT40N120B2D1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGT40N120B2D1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
- Power - Max: 380 W
- Switching Energy: 4.5mJ (on), 3mJ (off)
- Input Type: Standard
- Gate Charge: 138 nC
- Td (on/off) @ 25°C: 21ns/290ns
- Test Condition: 960V, 40A, 2Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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