IXGT60N60C3D1
IXYS

IXYS
IGBT 600V 75A 380W TO268
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Reference Price (USD)
30+
$7.49067
Exquisite packaging
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Optimize your power systems with the IXGT60N60C3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGT60N60C3D1 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 380 W
- Switching Energy: 800µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 115 nC
- Td (on/off) @ 25°C: 21ns/70ns
- Test Condition: 480V, 40A, 3Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA