IXGT6N170AHV-TRL
IXYS
IXYS
IXGT6N170AHV TRL
$11.37
Available to order
Reference Price (USD)
1+
$11.37153
500+
$11.2578147
1000+
$11.1440994
1500+
$11.0303841
2000+
$10.9166688
2500+
$10.8029535
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the IXGT6N170AHV-TRL Single IGBT transistor from IXYS. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IXGT6N170AHV-TRL ensures energy efficiency and reliability. Trust IXYS's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 14 A
- Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
- Power - Max: 75 W
- Switching Energy: 590µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 18.5 nC
- Td (on/off) @ 25°C: 46ns/220ns
- Test Condition: 850V, 6A, 33Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV
Related Products
Harris Corporation
HGTB12N60D1C
Harris Corporation
HGTH12N50CID
IXYS
IXYR100N65A3V1
Harris Corporation
HGT1S15N120C3S
onsemi
AFGHL30T65RQDN
Harris Corporation
HGT1S7N60B3
onsemi
ISL9V3040P3-F085C
Infineon Technologies
IKFW75N60ETXKSA1
IXYS
IXXX200N60B3
Infineon Technologies