IXGX120N60B
IXYS
IXYS
IGBT 600V 200A 660W TO247
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Enhance your electronic projects with the IXGX120N60B Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXGX120N60B ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXGX120N60B for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
- Power - Max: 660 W
- Switching Energy: 2.4mJ (on), 5.5mJ (off)
- Input Type: Standard
- Gate Charge: 350 nC
- Td (on/off) @ 25°C: 60ns/200ns
- Test Condition: 480V, 100A, 2.4Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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