IXGX32N170AH1
IXYS
IXYS
IGBT 1700V 32A 350W PLUS247
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Enhance your electronic projects with the IXGX32N170AH1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXGX32N170AH1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXGX32N170AH1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 32 A
- Current - Collector Pulsed (Icm): 110 A
- Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
- Power - Max: 350 W
- Switching Energy: 4.1mJ (on), 1.25mJ (off)
- Input Type: Standard
- Gate Charge: 157 nC
- Td (on/off) @ 25°C: 27ns/270ns
- Test Condition: 850V, 32A, 2.7Ohm, 15V
- Reverse Recovery Time (trr): 150 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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