IXSH15N120BD1
IXYS
IXYS
IGBT 1200V 30A 150W TO247
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Enhance your electronic projects with the IXSH15N120BD1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXSH15N120BD1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXSH15N120BD1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
- Power - Max: 150 W
- Switching Energy: 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 57 nC
- Td (on/off) @ 25°C: 30ns/148ns
- Test Condition: 960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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