RJH60D7ADPK-00#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 90A 300W TO-3P
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Reference Price (USD)
1+
$6.43000
10+
$5.74400
Exquisite packaging
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Optimize your power systems with the RJH60D7ADPK-00#T0 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RJH60D7ADPK-00#T0 delivers consistent and reliable operation. Trust Renesas Electronics America Inc's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 1.1mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 60ns/190ns
- Test Condition: 300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3P
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Renesas Electronics America Inc