IXSN35N100U1
IXYS
IXYS
IGBT MOD 1000V 38A 205W SOT227B
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Engineered for excellence, the IXSN35N100U1 IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The IXSN35N100U1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the IXSN35N100U1.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 38 A
- Power - Max: 205 W
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
- Current - Collector Cutoff (Max): 750 µA
- Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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