IXTJ6N150
IXYS
IXYS
MOSFET N-CH 1500V 3A TO247
$13.03
Available to order
Reference Price (USD)
30+
$9.43000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXTJ6N150 single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXTJ6N150 combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.85Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMP2004TK-7
Infineon Technologies
IRF6641TRPBF
Microchip Technology
APT66F60L
IXYS
IXFH15N60
Rohm Semiconductor
RS3G160ATTB1
Fairchild Semiconductor
FQPF13N50C
Rohm Semiconductor
RP1E090RPTR
Rohm Semiconductor
R8011KNXC7G
Infineon Technologies
IRFR2307ZTRLPBF
Vishay Siliconix