IXXN200N65A4
IXYS
IXYS
IGBT
$0.00
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Reference Price (USD)
10+
$27.38900
Exquisite packaging
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Enhance your electronic projects with the IXXN200N65A4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXXN200N65A4 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXXN200N65A4 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 440 A
- Current - Collector Pulsed (Icm): 1200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
- Power - Max: 1250 W
- Switching Energy: 8.8mJ (on), 6.7mJ (off)
- Input Type: Standard
- Gate Charge: 736 nC
- Td (on/off) @ 25°C: 140ns/1.04µs
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 160 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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