LND01K1-G
Microchip Technology
Microchip Technology
MOSFET N-CH 9V 330MA SOT23-5
$0.58
Available to order
Reference Price (USD)
3,000+
$0.33166
Exquisite packaging
Discount
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The LND01K1-G from Microchip Technology redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the LND01K1-G offers the precision and reliability you need. Trust Microchip Technology to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 9 V
- Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +0.6V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 5 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -25°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-5
- Package / Case: SC-74A, SOT-753
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