LSIC1MO120G0080
Littelfuse Inc.
Littelfuse Inc.
MOSFET SIC 1200V 25A TO247-4L
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the LSIC1MO120G0080 single MOSFET from Littelfuse Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Littelfuse Inc.'s LSIC1MO120G0080 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 20 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Rohm Semiconductor
RRS110N03TB1
Vishay Siliconix
IRFSL9N60ATRL
STMicroelectronics
STW37N60DM2AG
onsemi
FQD9N08TM
NXP USA Inc.
PSMN005-55B,118
Infineon Technologies
IRFPS3815PBF
Infineon Technologies
IPB65R095C7ATMA1
Infineon Technologies
IRFL014NPBF
STMicroelectronics
STP30NM60ND
onsemi