MG12150S-BN2MM
Littelfuse Inc.

Littelfuse Inc.
IGBT MODULE 1200V 200A 625W S3
$0.00
Available to order
Reference Price (USD)
1+
$97.89000
10+
$92.22500
25+
$88.26520
100+
$83.73840
Exquisite packaging
Discount
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The MG12150S-BN2MM from Littelfuse Inc. exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the MG12150S-BN2MM in megawatt-level wind turbine converters. With Littelfuse Inc.'s proven track record, the MG12150S-BN2MM represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 150A (Typ)
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: S-3 Module
- Supplier Device Package: S3