NXH80B120H2Q0SNG
onsemi
onsemi
PIM POWER MODULE
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onsemi's NXH80B120H2Q0SNG sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the NXH80B120H2Q0SNG in your traction inverters or high-energy physics experiments for unparalleled performance. Trust onsemi to deliver cutting-edge IGBT solutions with the NXH80B120H2Q0SNG power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Dual Boost Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 41 A
- Power - Max: 103 W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 9.7 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
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