IKFW40N65DH5XKSA1
Infineon Technologies
Infineon Technologies
HOME APPLIANCES 14 PG-HSIP247-3
$4.28
Available to order
Reference Price (USD)
1+
$4.28350
500+
$4.240665
1000+
$4.19783
1500+
$4.154995
2000+
$4.11216
2500+
$4.069325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IKFW40N65DH5XKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IKFW40N65DH5XKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IKFW40N65DH5XKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 53 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
- Power - Max: 106 W
- Switching Energy: 1.17mJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 18ns/105ns
- Test Condition: 400V, 40A, 14Ohm, 15V
- Reverse Recovery Time (trr): 64 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
Related Products
IXYS
IXYP20N120B4
Renesas Electronics America Inc
RJP6065DPE-00#J3
Renesas Electronics America Inc
RJP65T43DPM-00#T1
Renesas Electronics America Inc
RJP63G4DPE-00#J3
Infineon Technologies
FP150R07N3E4
Harris Corporation
IGT6D20
Toshiba Semiconductor and Storage
GT40WR21,Q
Harris Corporation
HGTG20N50C1D
Renesas
RJH1BF7RDPQ-80#T2
Toshiba Semiconductor and Storage