HGTD8P50G1S
Harris Corporation
Harris Corporation
8A, 500V P-CHANNEL IGBT
$0.73
Available to order
Reference Price (USD)
1+
$0.73000
500+
$0.7227
1000+
$0.7154
1500+
$0.7081
2000+
$0.7008
2500+
$0.6935
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGTD8P50G1S Single IGBT transistor by Harris Corporation is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The HGTD8P50G1S ensures precise power control and long-term stability. With Harris Corporation's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate HGTD8P50G1S into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
- Power - Max: 66 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
Related Products
Harris Corporation
HGTD7N60B3S
onsemi
FGHL75T65LQDTL4
Infineon Technologies
FP25R12KT4_B15
IXYS
IXG100IF1200HF
Harris Corporation
HGTG20N60C3R
Infineon Technologies
IKW15N120CS7XKSA1
Rohm Semiconductor
RGW00TS65EHRC11
Infineon Technologies
IHW30N110R5XKSA1
Harris Corporation
HGTP20N60C3R
Infineon Technologies