IXYH120N65B3
IXYS
IXYS
DISC IGBT XPT-GENX3 TO-247AD
$19.27
Available to order
Reference Price (USD)
1+
$19.26767
500+
$19.0749933
1000+
$18.8823166
1500+
$18.6896399
2000+
$18.4969632
2500+
$18.3042865
Exquisite packaging
Discount
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Upgrade your power management systems with the IXYH120N65B3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXYH120N65B3 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXYH120N65B3 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 340 A
- Current - Collector Pulsed (Icm): 760 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
- Power - Max: 1360 W
- Switching Energy: 1.34mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 250 nC
- Td (on/off) @ 25°C: 30ns/168ns
- Test Condition: 400V, 50A, 2Ohm, 15V
- Reverse Recovery Time (trr): 28 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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