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MMIX1T660N04T4

IXYS
MMIX1T660N04T4 Preview
IXYS
MOSFET N-CH 40V 660A 24SMPD
$21.52
Available to order
Reference Price (USD)
1+
$21.52400
500+
$21.30876
1000+
$21.09352
1500+
$20.87828
2000+
$20.66304
2500+
$20.4478
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 24-SMPD
  • Package / Case: 24-PowerSMD, 21 Leads

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