MRF8S18260HR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 1.81GHZ NI1230-8
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Designed for superior RF performance, the MRF8S18260HR6 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The MRF8S18260HR6 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the MRF8S18260HR6 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.81GHz
- Gain: 17.9dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 74W
- Voltage - Rated: 65 V
- Package / Case: SOT-1110A
- Supplier Device Package: NI1230-8
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