MS1006
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 55V 30MHZ M135
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Enhance your RF designs with the MS1006, a high-efficiency Bipolar Junction Transistor (BJT) from Microsemi Corporation. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The MS1006 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Microsemi Corporation for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 14dB
- Power - Max: 127W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V
- Current - Collector (Ic) (Max): 3.25A
- Operating Temperature: 200°C
- Mounting Type: Stud Mount
- Package / Case: M135
- Supplier Device Package: M135
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