MS2206
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 20V 1.15GHZ M115
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The MS2206 RF Bipolar Junction Transistor (BJT) by Microsemi Corporation is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the MS2206 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Microsemi Corporation for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 7.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Current - Collector (Ic) (Max): 1A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M115
- Supplier Device Package: M115
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