MSCSM120DUM11T3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SP3F
$328.58
Available to order
Reference Price (USD)
1+
$328.58000
500+
$325.2942
1000+
$322.0084
1500+
$318.7226
2000+
$315.4368
2500+
$312.151
Exquisite packaging
Discount
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Choose the MSCSM120DUM11T3AG from Microchip Technology for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the MSCSM120DUM11T3AG stands out for its reliability and efficiency. Microchip Technology's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
- Power - Max: 1067W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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