MSCSM120DUM31CTBL1NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL1
$175.84
Available to order
Reference Price (USD)
1+
$175.84000
500+
$174.0816
1000+
$172.3232
1500+
$170.5648
2000+
$168.8064
2500+
$167.048
Exquisite packaging
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Upgrade your electronic designs with the MSCSM120DUM31CTBL1NG by Microchip Technology, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the MSCSM120DUM31CTBL1NG ensures energy efficiency and robust performance. Microchip Technology's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -