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MSCSM120DUM31CTBL1NG

Microchip Technology
MSCSM120DUM31CTBL1NG Preview
Microchip Technology
PM-MOSFET-SIC-SBD-BL1
$175.84
Available to order
Reference Price (USD)
1+
$175.84000
500+
$174.0816
1000+
$172.3232
1500+
$170.5648
2000+
$168.8064
2500+
$167.048
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual) Common Source
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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