NE5550779A-T1A-A
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$3.61
Available to order
Reference Price (USD)
1+
$3.61000
500+
$3.5739
1000+
$3.5378
1500+
$3.5017
2000+
$3.4656
2500+
$3.4295
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the NE5550779A-T1A-A by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NE5550779A-T1A-A is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Diodes Incorporated
DMN2058U-7
Rohm Semiconductor
RS6G120BGTB1
Diodes Incorporated
DMP3045LFVW-13
Infineon Technologies
BSC016N06NSSCATMA1
Vishay Siliconix
SQD45P03-12-T4_GE3
Diodes Incorporated
DMP3011SFVWQ-13
Diodes Incorporated
DMT30M9LPS-13
Renesas Electronics America Inc
2SJ356(0)-T1-AZ
Goford Semiconductor
G65P06D5
STMicroelectronics