NESG2046M33-T3-A
CEL
CEL
RF TRANS NPN 5V 18GHZ 3SMINMOLD
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NESG2046M33-T3-A by CEL is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the NESG2046M33-T3-A from CEL, a leader in semiconductor innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 18GHz
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.5dB @ 2GHz
- Gain: 9.5dB ~ 11.5dB
- Power - Max: 130mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 1V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SuperMiniMold (M33)
Related Products
Microsemi Corporation
MS1006
MACOM Technology Solutions
NPT1010P
Central Semiconductor Corp
CP618-CM5583-CT
Microsemi Corporation
54006H
Microsemi Corporation
MS1227
Central Semiconductor Corp
CP229-2N5109-CT20
Microsemi Corporation
42107HS
Microsemi Corporation
MDS1100
Central Semiconductor Corp
CEN1107 APM
Microsemi Corporation