NGD15N41ACLT4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Available to order
Reference Price (USD)
2,500+
$0.58800
5,000+
$0.56000
Exquisite packaging
Discount
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Enhance your electronic projects with the NGD15N41ACLT4G Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the NGD15N41ACLT4G ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose NGD15N41ACLT4G for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 440 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
- Power - Max: 107 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -/4µs
- Test Condition: 300V, 6.5A, 1kOhm
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
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