NGTB40N120LWG
onsemi
onsemi
IGBT 1200V 40A TO247
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Enhance your electronic projects with the NGTB40N120LWG Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the NGTB40N120LWG ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose NGTB40N120LWG for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 320 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
- Power - Max: 260 W
- Switching Energy: 5.5mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 140ns/360ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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