NGTB75N60FL2WG
onsemi
onsemi
IGBT 600V 75A TO247
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Upgrade your power management systems with the NGTB75N60FL2WG Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the NGTB75N60FL2WG provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose NGTB75N60FL2WG for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 595 W
- Switching Energy: 1.5mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 310 nC
- Td (on/off) @ 25°C: 110ns/270ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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