NP28N10SDE-E1-AY
Renesas
Renesas
NP28N10SDE-E1-AY - MOS FIELD EFF
$1.23
Available to order
Reference Price (USD)
1+
$1.23259
500+
$1.2202641
1000+
$1.2079382
1500+
$1.1956123
2000+
$1.1832864
2500+
$1.1709605
Exquisite packaging
Discount
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The NP28N10SDE-E1-AY single MOSFET from Renesas is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the NP28N10SDE-E1-AY is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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