NP36P06KDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 60V 36A TO263
$1.79
Available to order
Reference Price (USD)
1+
$1.79000
500+
$1.7721
1000+
$1.7542
1500+
$1.7363
2000+
$1.7184
2500+
$1.7005
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the NP36P06KDG-E1-AY by Renesas Electronics America Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NP36P06KDG-E1-AY stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas Electronics America Inc.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IRF7493TRPBF
Taiwan Semiconductor Corporation
TSM240N03CX RFG
IXYS
IXTH500N04T2
Infineon Technologies
SPW24N60CFDFKSA1
STMicroelectronics
STB140NF75T4
Rohm Semiconductor
RHU002N06FRAT106
STMicroelectronics
STO36N60M6
Nexperia USA Inc.
PMF63UNEX
Infineon Technologies
IPA50R190CEXKSA2
Diodes Incorporated