NP50N04YUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
LOW VOLTAGE POWER MOSFET
$1.63
Available to order
Reference Price (USD)
1+
$1.63000
500+
$1.6137
1000+
$1.5974
1500+
$1.5811
2000+
$1.5648
2500+
$1.5485
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NP50N04YUK-E1-AY from Renesas Electronics America Inc sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Renesas Electronics America Inc's NP50N04YUK-E1-AY for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 97W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON (5x5.4)
- Package / Case: 8-PowerLDFN
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