SIA430DJT-T4-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 12A/12A PPAK
$0.19
Available to order
Reference Price (USD)
6,000+
$0.19832
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SIA430DJT-T4-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIA430DJT-T4-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
Renesas Electronics America Inc
NP90N06VLK-E1-AY
STMicroelectronics
STFU26N60M2
IXYS
IXTF2N300P3
Diodes Incorporated
DMN10H170SFG-13
Renesas
NP28N10SDE-E1-AY
onsemi
NDCTR05120A
Harris Corporation
IRFD1Z3
Infineon Technologies
AIMW120R080M1XKSA1
Alpha & Omega Semiconductor Inc.
AON6266E
Vishay Siliconix